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| Datasheet File OCR Text: |
| NTE2510 Silicon NPNTransistor High Frequency Video Output Features: D High Gain Bandwidth Product: fT = 2GHz D High Current Capacity: IC = 500mA Applications: D High-Definition CRT Display Video Output D Wide-Band Amp Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mA Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE fT Test Conditions VCB = 20V, IE = 0 VEB = 2V, IC = 0 VCE = 5V, IC = 50mA VCE = 5V, IC = 500mA VCE = 5V, IC = 100mA Min - - 60 20 - Typ - - - - 2.0 Max 0.1 5.0 120 - - GHz Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Output Capacitance Reverse Transfer Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Symbol Cob Cre VCE(sat) VBE(sat) Test Conditions VCB = 10V, f = 1MHz VCB = 10V, f = 1MHz IC = 300mA, IB = 30mA IC = 300mA, IB = 30mA Min - - - - Typ 6.0 4.6 0.3 0.9 Max - - 0.8 1.2 Unit pF pF V V .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4) |
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